Fig. 5: Effect of UV irradiation on the PL emission of MoS2.
From: Giant persistent photoconductivity in monolayer MoS2 field-effect transistors
a, b PL maps of an as-grown ML-MoS2 crystal on a SiO2/Si substrate before (a) and after irradiation (b) with UV light (λ = 365 nm, ∼30 mW cm−2, 5 min). The PL intensity significantly diminishes after exposure to UV light (scale bar: 20 µm).
