Fig. 2: Magnetotransport measurements at various bottom-gate voltages.
From: Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet
a Low-field magnetoconductance, \({\mathrm{{\Delta}}}G = G\left( B \right) - G(B = 0)\), measured for the device shown in Fig.1a at various bottom-gate voltages VBG at temperature T = 1.9 K. The bottom trace shows the measured magnetoconductance data at VBG = 0 V and all other measured magnetoconductance traces are successively vertically offset for clarity. Here the top-gate voltage is set at VTG = 0 V. The black solid lines are the theoretical fits of the experimental data to the HLN equation [Eq. (1)]. b Phase coherence length Lφ, spin–orbit length LSO, and mean free path Le, in the InSb nanosheet extracted from the fits as a function of VBG.
