Fig. 3: Grid spectroscopy of PtTe2 type C and E defects.
a STM topography of the type C defect (3 × 3 nm2, V = 0.6 V and I = 740 pA). Grid spectroscopy was performed on the area in a. b I/V map depicts the tunneling current value (taken from the I(V)) at each spectroscopy point on the grid (25 × 25 points) at a bias voltage value of −0.150 V (filled states). Three dark points correspond to lower tunneling current of the defect on the filled states in PtTe2. c Individual I/V (dotted line) and dI/dV (solid line) spectra of two points indicated by the colored stars in a, b, and d positioned on a flat terrace and on the defect. d I/V map at +0.148 V above the Fermi level. e STM topography of the type E defect (4 × 4 nm2, V = 0.9 V and I = 250 pA). Grid spectroscopy was performed on the area in e. f I/V map depicts the tunneling current value (taken from the I(V)) at each spectroscopy point on the grid (30 × 30 points) at a bias voltage value of −2.2 V. g Individual I/V (dotted line) and dI/dV (solid line) spectra of two points on the grid indicated by the colored stars in e, f, and h positioned on a defect-free terrace and on the defect. h I/V map at +1.48 V above the Fermi level.
