Fig. 6: Electronic bandgaps (Eg) of all t-Te nanowires and sheets of Tellurene with the average number of helical neighbors per helix \(\bar{m}\), calculated with HSE06 functionals, including spin–orbit interaction. | npj 2D Materials and Applications

Fig. 6: Electronic bandgaps (Eg) of all t-Te nanowires and sheets of Tellurene with the average number of helical neighbors per helix \(\bar{m}\), calculated with HSE06 functionals, including spin–orbit interaction.

From: Tellurium as a successor of silicon for extremely scaled nanowires: a first-principles study

Fig. 6

The dotted lines represent a linear fit on the hexagonal, rhomboid, and triangular t-Te nanowires. We extrapolate the linear fit to cover the single helix, and the bulk t-Te domains, showing excellent agreement.

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