Fig. 1: Heterojunction device structure and Raman spectrum evaluation. | npj 2D Materials and Applications

Fig. 1: Heterojunction device structure and Raman spectrum evaluation.

From: Gate-switchable rectification in isotype van der Waals heterostructure of multilayer MoTe2/SnS2 with large band offsets

Fig. 1: Heterojunction device structure and Raman spectrum evaluation.

a The optical image and b the schematic side view of the MoTe2/SnS2 heterojunction device, respectively. The scale bar used is 10 μm. E1 and E2 (E3 and E4) are the electrodes to measure the electrical properties of MoTe2 (SnS2) individual channels and E2–E3 is for the heterojunction channel. c Topographic image for the green dashed box in the optical images, and the respective height profiles. d Raman spectra of the samples at different positions. e Raman shift in the SnS2 A1g peak after heterojunction formation.

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