Fig. 3: Investigation on the rectification of the MoTe2/SnS2 heterojunction device. | npj 2D Materials and Applications

Fig. 3: Investigation on the rectification of the MoTe2/SnS2 heterojunction device.

From: Gate-switchable rectification in isotype van der Waals heterostructure of multilayer MoTe2/SnS2 with large band offsets

Fig. 3: Investigation on the rectification of the MoTe2/SnS2 heterojunction device.

a Output characteristic of the MoTe2/SnS2 heterojunction device. The inset shows the logarithmic scale of the output curve. b Rectification ratio, defined by Ib/If at the same Vds, with the increasing magnitude of Vds. c Fowler–Nordheim plot. d Energy band diagrams of the heterojunction at different Vds.

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