Fig. 4: Gate-voltage dependence of the heterojunction device. | npj 2D Materials and Applications

Fig. 4: Gate-voltage dependence of the heterojunction device.

From: Gate-switchable rectification in isotype van der Waals heterostructure of multilayer MoTe2/SnS2 with large band offsets

Fig. 4: Gate-voltage dependence of the heterojunction device.

a Gate dependence of output characteristics of the MoTe2/SnS2 heterojunction in the range −1 to 1 V. The inset shows the schematic for the electrical measurement on the heterojunction. Vds is applied to E2, which is in contact with MoTe2, and E3, which is in contact with SnS2, is grounded. b Rectification ratio under different gate voltages at Vds = 1 V. The inset represents the band alignment at negative voltages. c Transfer characteristics of the heterojunction at |Vds| = 1 V.

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