Fig. 3: Electrical characterization at room temperature (T = 300 K) of an SnTiS3 FET. | npj 2D Materials and Applications

Fig. 3: Electrical characterization at room temperature (T = 300 K) of an SnTiS3 FET.

From: Superposition of semiconductor and semi-metal properties of self-assembled 2D SnTiS3 heterostructures

Fig. 3

a The measured output electrical characteristics of misfit SnTiS3 layers. The optical and AFM profile image of the fabricated devices shows in the inset. b Transfer characteristics of SnTiS3 FET at Vsd = 0.01 V. The fabricated device thickness is 30 nm as shown in the inset of the inset.

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