Fig. 4: Optical characterization of the SnTiS3 crystals. | npj 2D Materials and Applications

Fig. 4: Optical characterization of the SnTiS3 crystals.

From: Superposition of semiconductor and semi-metal properties of self-assembled 2D SnTiS3 heterostructures

Fig. 4

a Absorbance spectrum of the exfoliated SnTiS3 flakes in iso-propanol solvent. The bandgap of the SnTiS3 crystal is estimated to be 1.9–2.3 eV by fitting the measured data to a Tauc’s plot as shown in inset. b Fluorescence spectrum of the SnTiS3 crystal flakes by exciting with 488 nm laser source. c Optical image of the mechanically exfoliated few-layer thickness SnTiS3 flakes (left-hand side), with the corresponding photoluminescence mappings (right-hand side). d Photoluminescence spectrum of SnTiS3 crystal with different layer thicknesses. e Calculated density of state of five-layer SnTiS3 and partial density of state contributed by its component SnS and TiS2 layers. f Calculated electronic band structures of monolayer SnS in the misfit triclinic SnTiS3 crystal structure, which show a direct energy gap.

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