Fig. 1: Creating superlattice potential in a general 2D material from the twisted h-BN substrate. | npj 2D Materials and Applications

Fig. 1: Creating superlattice potential in a general 2D material from the twisted h-BN substrate.

From: Universal superlattice potential for 2D materials from twisted interface inside h-BN substrate

Fig. 1

a A moiré interface of nearly parallel alignment is created inside the h-BN substrate by stacking a n-layer AA′-h-BN on another AA′-h-BN film. b Spontaneous charge redistribution at this interface leads to electrical polarization patterned with periodicity controlled by twisting angle δ, which produces an electrostatic superlattice potential V(R) in the target material with strength controlled by n and δ.

Back to article page