Fig. 4: Ferroelectricity of PLD-grown HZO on Si. | npj 2D Materials and Applications

Fig. 4: Ferroelectricity of PLD-grown HZO on Si.

From: Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

Fig. 4

Dependency of (a) P–V (at 10 kHz) curves (b) magnitudes of |Vc|, |Pr| and curve-asymmetricity on the thickness of HZO (4 nm, 7 nm, and 12 nm) (c) PFM hysteresis loop averaged from 25 measurements (d) Histograms of PFM phase, before and after poling, over the same area (e) PFM of HZO thin films after poling with applied tip voltages of ±5 V.

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