Fig. 1: Temperature-dependent PL transition from R- and H-type structures.
From: Temperature dependent moiré trapping of interlayer excitons in MoSe2-WSe2 heterostructures
a Cartoon depiction of hBN-encapsulated MoSe2–WSe2 heterostructure showing an IX composed of an electron and hole in opposite layers. b, c Example PL spectra of R(H)-type IX at two different temperatures for fixed excitation power 56 µW (74 µW). The left insets depict a top view of the real-space alignment. The right insets show the alignment of the valleys in momentum space. d Spectrally integrated PL of R- and H-type heterostructures as a function of temperature, showing temperature-dependent transitions at 40 and 30 K, respectively, marked by larger circles. e Energy-dependent transition temperature for five different samples. The R and H subscripts label the sample number, labeled in order of increasing IX energy, where the a and b subscripts denote two disconnected sample regions of the same device. T’ labels the lower energy triplet’ peak, and T labels the higher energy triplet peak. The IX center energy varies with temperature and excitation power, the transition temperature is plotted for each power, and the solid dot marks the transition temperature for the highest excitation power. f Cartoon of IX trapped in moiré potential (Vmoiré) below a transition temperature (Tc). Excitation wavelength is 670 nm, and the confocal collection diameter is 1 µm.
