Fig. 3: Bidirectional switching of the IP field.

a Potential profiles across α-In₂Se₃ channel following withdrawn +100 V (gray) and −100 V (red) gate potential. Inset shows the pulse profile of the applied electrical bias, with the arrows denoting the point of measurement after withdrawal of pulse (pulse duration was 6 s). b Extracted IP electric field across the channel following four cycles of applying alternating gate bias of +100 V (black squares) and −100 V (red square). c Extracted IP electric field across the channel following four cycles of applying a bias of +50 V (black squares) and −50 V (red squares) on the left electrode (Source) with all other terminals grounded. d Extracted IP electric field across the channel following four cycles of applying a bias of +50 V (black squares) and −50 V (red squares) on the right electrode (Drain) with all other terminals grounded. Error bars comprise the standard deviation (STD) analyzed from the full measured profile.