Fig. 4: Polarization hysteresis. | npj 2D Materials and Applications

Fig. 4: Polarization hysteresis.

From: Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3

Fig. 4

a IP electric field across the α-In2Se3 channel as a function of withdrawn gate voltage. The connected black dots denote electric fields for withdrawn gate voltage from 0 to −100 V, the connected red dots denote electric fields for withdrawn gate voltage from −80 to 100 V and the connected green dots indicate electric fields for withdrawn gate voltage from 80 to −100 V. The direction of the arrows indicates the direction of progression of the scan. b Temporal remanence of the IP electric field after the withdrawal of gate bias. The dotted blue lines show the general trend of the evolution of the electric field with time.

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