Fig. 5: Photoresponse modulation.
From: Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3
a Temporal response of photocurrent in α-In2Se3 for various gate pulses. Gate pulses were applied for 30 s after which the gate was withdrawn. The measurements were performed with zero applied gate potential and drain voltage of −2 V thereafter. b Photorecurrent as a function of the withdrawn gate voltage pulse. Error bars comprise the standard deviation (STD) for each current level measured over time of light exposure. c, d Schematic illustrations describing the origin for the variable photoresponsivity following the application of negative and positive gate bias, respectively.
