Fig. 2: Fabrication process and characteristics of the sample.
From: Optimum design for the ballistic diode based on graphene field-effect transistors
a Ballistic device with BN-Gr-BN layer was fabricated by RIE, the cross-section of which may include contaminations. b One-dimensional edge contact structure of the graphene encapsulated with BNs. c DC current-voltage measurement configuration is illustrated. The current was supplied with a series resistance of 1 MΩ to provide source-drain current (Isd). Vg was applied directly to the silicon substrate to control the carrier type and carrier concentration. d 100× optical microscopic image of a GBTD. Scale bar = 30 µm. e FESEM image of the device A shows a narrow neck width. Scale bar = 1 µm. f–g Transfer curves of resistance versus Vg of the GBTDs fabricated by the modified (f) and conventional method (g), respectively.
