Fig. 3: Transport properties of device A at room temperature.
From: Optimum design for the ballistic diode based on graphene field-effect transistors
a, b I-V characteristics at Vg = +2.5 V and −5 V, respectively. c The γ was plotted as a function of Vg at different Isd. d The γ versus Isd at Vg = +2.5 V, −5 V, and −2 V.
