Fig. 5: Transport properties of devices C and D at room temperature.
From: Optimum design for the ballistic diode based on graphene field-effect transistors
a I-V curves of device C are plotted as a function of Isd at Vg = +2 V and −2 V. b γ of device C is shown as a function of Isd. c The I-V characteristic curves of device D at Vg = −2 V and +18 V. d γ of device D is shown as a function of Isd.
