Fig. 6: Simulation model for transport of charge carriers in the ballistic region of devices.
From: Optimum design for the ballistic diode based on graphene field-effect transistors
a Ballistic regions are denoted as dotted circles with the radius λ. b A charge at point M0 can pass AB through processes: (1) direct passing with angles from \(\theta _0^{min}\) to \(\theta _0^{max}\) (blue arrow), (2) reflecting once from edge line (\(\overline {{{{\mathrm{CB}}}}}\)) with the angle (\(\theta _1^{min} \le \theta \le\) \(\theta _1^{max}\)) (orange arrow), or (3) reflecting twice from \(\overline {{{{\mathrm{AD}}}}}\) and \(\overline {{{{\mathrm{CB}}}}}\) with \(\theta _2^{min} \le \theta \le\) \(\theta _2^{max}\) (green arrow). c The considered areas for passing the neck in forward transmission: direct transport (no reflection: green region); 1 reflection (orange region); 2 reflection (blue region). d Schematic representation of possible transmission areas to be integrated.
