Table 1 The highest γ are listed with geometric parameters of different ballistic devices.

From: Optimum design for the ballistic diode based on graphene field-effect transistors

 

L (µm)

dch (µm)

dneck (nm)

Current bias (µA)

Highest γ

Reference

Device A

10

2

190 ± 5

100

1.22

 

Device B

8

2

125 ± 5

60

1.58

 

Device C

6

2

190 ± 5

80

1.32

 

Device D

6

2

175 ± 5

80

1.66

1.3124; 1.426

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