Fig. 3: Memristive crossbar array. | npj 2D Materials and Applications

Fig. 3: Memristive crossbar array.

From: Hybrid architecture based on two-dimensional memristor crossbar array and CMOS integrated circuit for edge computing

Fig. 3: Memristive crossbar array.The alternative text for this image may have been generated using AI.

a SEM image of a 10 × 10 crossbar array of metal/h-BN/metal memristors. The scale bar is 40 µm. b I–V curves measured in one of the memristors in a when programmed using ICC = 1 µA, demonstrating the presence of stable bipolar RS. c Statistical analysis of the VSET and VRESET for a population of 16 devices. d, f Comparison of coefficient of variation (CV) of VSET and VRESET of all our h-BN memristors (respectively) with the values reported in previous publications. The Cv is calculated from different devices and is ordered from smaller to higher. e, g Change of CV of VSET and VRESET (respectively) with increasing population of tested devices. For example, the value of CV for n memristors indicates the cumulative CV for a population of n memristors. h Current signal measured when applying sequences of pulsed voltage stresses, demonstrating analog transitions between different conductance states (up: amplitude 5.8 V, duration 1 ms and interval 1 ms; middle: amplitude 5.8 V, duration 500 µs and interval 500 µs; bottom: amplitude 4 V, duration 20 ms and interval 25 ms). i Cumulative probability plot of the currents registered during a constant voltage stress at 0.1 V for 100 s, at 26 different current levels during the potentiation of the Au/h-BN/Au device. In all cases the current is stable. More stable states may be registered if the reading is carried out at other resistance levels.

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