Table 2 Examples of NDG growth using the CVD method.
CVD Type; Substrate; Sample size (cm2) | T (°C); Growth time (min) | Precursors; Pressure (mbar) | N at.% (XPS) | Application and remarks | Ref. (1st author, Journal, year) |
|---|---|---|---|---|---|
AP-CVD Cu foil (127); 6.4 | 300–1000; ~few hr | pyridine, H2; 1000 | 1.6 (1.8 –TEM) | two-step, oxidized N, polymer-assisted wet transfer using FeCl3 etchant. claimed low-temperature growth method for direct synthesis on a device, however, annealed Cu foil at 1000 °C | Son, Carbon, 202026 |
HF + PE-CVD Quartz; 6.7 | 850; 9 | C2H2, H2, N2; 0.1 | 3 | defective graphene, electricity generation device—320 mV, better than pristine graphene, three types of N-doping, transparency ~90%—for high N2 flow (20 sccm), N-doped graphene flakes with amorphous carbon | Zhai, J. Mater. Chem. A 2019 34 |
PE-CVD; SiO2/Si | 175 | C2H2, NH3 | 0.7 | FET, pyridinic-N, catalyst-free growth, low-temperature, bright atoms attributed to N in STM images | Wei, ACS Nano, 2015 82 |
Thermal CVD; Ni | 1100; 12 | Monoethanolamine, N2; NM | 2.9 | one to ten graphene layers, high substrate temperature, liquid source, three types of N-doping configurations exist, need of two heating zones | Bao, Mat. Lett. 201489 |
LP-CVD; Cu | 900;>60 | C2H2, H2, NH3, He; 1.3 | 16 | two-step process, pure pyridinic-N, raise of the density of \(\pi\) states near the Fermi level and the reduction of work-function, electrochemical measurements, pyridinic-N not a promoter of ORR activity, electrodes for ORR studies | Luo, J. Material Chem., 201146 |
HW-CVD; Cu foil (25); 4 | 1000; 20 | Ar; pyridine; 6–8 | 2.4 | graphitic-N major, highly toxic N source | Jin, ACS. Nano 201187 |
AP-CVD; Cu foil (25); <4 | 850; 10 | Ar, H2, CH4, NH3; 1000 | 0.25 | in situ post NH3 treatment, substitutional N doping, STM imaging, N doping- 2.53 × 1012 N atoms per cm2, TEM images same as pristine graphene -no structure change | Lv, Sci. Rep. 201279 |
Thermal CVD; Cu foil (25); ~1.5 | 950; 500 | Ar, H2, NH3 Hexane, Acetonitrile; NM | 9 | LIB battery anode, direct growth on Cu current collector, major pyridinic-N, reversible LIB capacity higher for N-doped graphene than graphene | Reddy, ACS Nano 201053 |
Thermal CVD; Cu foil; <4 | 800; 10 | Ar, H2, CH4, NH3; NM | 8.9 | graphitic-N major, FET, N-doped graphene better FET on-off ratio than pristine graphene, IG/ID ~0.5 m, many wrinkles and broken areas, not fully graphene-FLG and MLG presence | Wei, Nano Lett 200956 |
