Fig. 2: The transient absorption (TA) spectra results with the amplitude variation (ΔA) vs. wavelength (nm) plot in the visible range(450–800 nm).
From: Charge transfer induced symmetry breaking in GaN/Bi2Se3 topological heterostructure device

a GaN template, b Glass/Bi2Se3 heterojunction, c n-GaN/Bi2Se3 at different time delays. TA spectra with amplitude variation (ΔA) vs. wavelength (nm) plot in the near infrared (NIR) range (800–1600 nm) at different time delays is shown for c GaN template, d Glass/Bi2Se3 heterojunction and e n-GaN/Bi2Se3 heterojunction.