Table 1 Summarizes the vibrational modes obtained by the Raman spectroscopy of Glass/Bi2Se3 and n-GaN/Bi2Se3.
From: Charge transfer induced symmetry breaking in GaN/Bi2Se3 topological heterostructure device
Vibration mode | Glass/Bi2Se3 | n-GaN/Bi2Se3 | ||||
|---|---|---|---|---|---|---|
Peak position (cm−1) | FWHM (cm−1) | I(A21g)/I(E2g) | Peak position (cm−1) | FWHM (cm−1) | I(A21g)/I(E2g) | |
A11g | 72.19 ± 0.05 | 5.78 ± 0.14 | 0.61 | 70.69 ± 0.18 | 8.69 ± 0.56 | 0.69 |
E2g | 131.43 ± 0.07 | 9.13 ± 0.20 | 129.22 ± 0.24 | 17.11± 0.81 | ||
A21g | 174.50 ± 0.13 | 12.42 ± 0.43 | 171.60 ± 0.30 | 13.23 ± 1.04 | ||
A21u | — | — | 162.41± 5.21 | 52.91 ± 12.95 | ||
SPM | — | — | 97.16 ± 1.01 | 37.09 ± 5.71 | ||
