Table 2 Parameters derived from the Glass/Bi2Se3 and n-GaN/Bi2Se3 transient absorption (TA) spectra and global fitting for lifetime estimation.

From: Charge transfer induced symmetry breaking in GaN/Bi2Se3 topological heterostructure device

Glass/Bi2Se3 Film

n-GaN/Bi2Se3 Heterojunction

S.N.

Wavelength (λ) (nm)

E(eV) =1240/λ

Ï„1(ps)

Ï„2(ps)

Ï„3(ps)

Wavelength (λ) (nm)

E(ev) =1240/λ

Ï„1(ps)

Ï„2(ps)

1

760 (GSB)1

1.6

0.78

  

630 (TA)2

1.9

150

6990

2

565 (TA)2

2.2

287

3.4

 

760 (TA)3

1.6

248

 

3

765 (TA)3

1.6

2.6

1.08

0.18

765 (GSB)1

1.6

1.71

 

4

1200 (GSB)4

1.0

5.2

  

1245 (GSB)4

1.0

6.8

 

5

840 (TA)5

1.5

862

  

825 (TA)5

1.5

540

 
  1. GSB and TA reflect the ground state bleaching and transient absorption respectively. Transitions are shown as superscript numeral in correlation with Fig. 3.
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