Table 1 Comparison of the latest reported emerging THz photodetectors.

From: A candidate material EuSn2As2-based terahertz direct detection and imaging

Frequency [THz]

Responsivity [V/W]

NEP [W Hz−1/2]

Mechanism

Normalization area (Anorm)

Refs.

0.3–1

0.1, 10, 32, 764, 4 k

1100 × 10−12, 3 × 10−12

Plasma waves, PTE Ballistic & Tunnelling rectification

λ2/4,

λ2/4π

Graphene 4, 27,28,29,30

0.15–0.298

0.15

4 × 10−8

1 × 10−9

Plasma waves, PTE

λ2/4

BP31

0.293

0.21

1.36 × 10−8

PTE

λ2/4

Bi2Te2.2Se0.87

0.12

475 A W−1

3.6 × 10−13

Photogalvanic & Photon-drag effect

material area

Bi2Se38

0.17

27 k

2 × 10−13

EIW

material area (300 µm2)

Bi2O2Se32

0.12

1.4 k

10−11

PTE

material area

PtTe2/graphene33

0.02~0.30

0.2–1.6 A/W

(0.3–2.4k)

6–20 A/W

(9–30k)

30 × 10−12

PTE, Anisotropic scattering

device area (0.13 mm2), λ2/4, material area (50.24 µm2)

This work (EuSn2As2)

  1. The normalization area Anorm, refers to the area to which the incident power was normalized: Pnorm = Pin × Anorm/Afocus. In our work, we use three normalization area Anorm to quantitatively analyze the responsivity, whereas the incident power was not normalized to any area, and the incident power was account for losses occurring in the unfocusing system.
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