Fig. 2: Effect of annealing process on the electrical properties of the BP transistor.
a Photograph of the BP transistor array. Zoomed-in optical microscope image shows a single device. AFM image at the boundary between the annealed BP thin film and bare substrate regions. The film thickness is about 20 nm. c Raman spectrum of the BP thin film after annealing. d Photoluminescence spectrum of the annealed BP thin film. Spectral region with wavelengths shorter than 1350 nm was filtered to remove signals from the SiO2/Si substrate. e, f Output and transfer curves of the BP transistor before annealing. g, h Output and transfer curves of the BP transistor after annealing. i, j Transfer curves (VD = 1 V) and output curves (VG = 0 V) at different temperatures from 210 K to 300 K. k Temperature-dependent conductivities of the BP film determined from the ungated device (VD = 1 V).
