Fig. 3: Optoelectronic characteristics of the BP phototransistor under 1550 nm light source. | npj 2D Materials and Applications

Fig. 3: Optoelectronic characteristics of the BP phototransistor under 1550 nm light source.

From: Electrochemically exfoliated phosphorene nanosheet thin films for wafer-scale near-infrared phototransistor array

Fig. 3: Optoelectronic characteristics of the BP phototransistor under 1550 nm light source.

a Photocurrent and b photoresponsivity under different power densities under zero gate bias condition. c Time-resolved photoresponse measured with P = 2.34 mW cm−2 and VD = 1 V. The 1550 nm light source was repeatedly turned on and off for 3 s and 7 s, respectively. d Photocurrent and e photoresponsivity under different power densities for different gate voltages (VD = 1 V). f Power-dependence of photocurrents and photoresponsivities for different gate voltages (VD = 1 V).

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