Fig. 3: Material characterization and electrical performance of back-gated MoS2 FET on SiO2/Si. | npj 2D Materials and Applications

Fig. 3: Material characterization and electrical performance of back-gated MoS2 FET on SiO2/Si.

From: Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET

Fig. 3

a Photoluminescence (PL) spectrum of MoS2. The inset shows a representative CVD-grown MoS2 flake used in this work. Scale bar, 5 μm. b Raman spectra showing A1g and \({{{\mathrm{E}}}}_{2{{{\mathrm{g}}}}}^1\) characteristic peaks of MoS2 before and after wet-transfer. c PL mapping for A exciton peak intensity at 1.85 eV and Raman mapping for the A1g and \({{{\mathrm{E}}}}_{2{{{\mathrm{g}}}}}^1\) peaks, all of which are obtained from the MoS2 triangle shown in the inset of a. d Measured transfer characteristics of 23 back-gate MoS2 FETs fabricated in different process batches (VDS = 1 V). Scale bar, 5 μm. e Measured output characteristics of a back-gated MoS2 FET at VGS = −15 V to 25 V in 5 V steps.

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