Table 1 Transistor parameters of the p-type Si FinFET and n-type MoS2 FET combined in CMOS inverter.
From: Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET
Device | Dielectric thickness (nm) | Dielectric constant37 | Length (μm) | Width (μm) | C (Fm−2) | μ (cm2 V−1 s−1) | SS (mV/dec) | Conductance (S) |
|---|---|---|---|---|---|---|---|---|
MoS2 FET | 20 | Al2O3: 9.8 | ~1 | ~7 | ~3.98 × 10–3 | ~0.2 | ~130 | ~1.12 × 10–7 |
Si FinFET | 2.5 | HfO2: 25 | ~7.0 × 10–2 | ~2.0 × 10–2 | ~4.96 × 10–2 | 2.51 | ~80 | ~3.08 × 10–5 |
