Fig. 2: Contact resistance of monolayer MoS2 edge-contact. | npj 2D Materials and Applications

Fig. 2: Contact resistance of monolayer MoS2 edge-contact.

From: The importance of the image forces and dielectric environment in modeling contacts to two-dimensional materials

Fig. 2

Calculated contact resistance vs. doping concentration for bulk and monolayer MoS2 edge contacts at a Schottky barrier height of 0.3 eV. MoS2 monolayers “sandwiched” between SiO2 or HfO2 are labeled as MoS2/SiO2 and MoS2/HfO2, respectively. The bottom and top x axes denote the 2D and bulk doping concentration in MoS2, respectively. The lowest contact resistance is achieved for MoS2 with top and bottom insulators as SiO2.

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