Fig. 2: Delamination of monolayer MoS₂ from the SiN_x surface.

a An I–V curve from Device 1 measured in 400 mM KCl (pH 8) from MoS₂ nanopore with ~13 nS in the beginning that increases to ~225 nS (conductance corresponds to the size of the SiN_x aperture). b Bright-field TEM images of Device 1, before and after the delamination. c, d A TEM image with a large field of view of Device 1 shows local delamination around the aperture area. Inset in (d) is a false-color zoom-in image with an area where the MoS₂ is completely detached (depicted as a dotted area) while the surrounding area retains MoS₂. Scale bar, 200 nm. e Measurements on Device 2 (d_TEM ~2.5 nm). Experimental ionic traces show an unstable MoS₂ pore current probed at different voltages (range: +/−500 mV, measured every 100 mV for 10 s). f, g Zoomed-in traces show an abrupt increase in the ionic current at low voltages: 200 mV and 300 mV. Insets in respective figures show a stepwise increase in the current which is voltage-dependent.