Fig. 2: Structural and electronic properties of MBT2SL/hBN.
From: High Chern number van der Waals magnetic topological multilayers MnBi2Te4/hBN
a Top and side views of the hollow site MBT/hBN adsorption registry. b The band structures of MBT2SL and MBT2SL/hBN with hBN contribution are shown in green. c Fermi energy dependence of the anomalous Hall conductance Sxy(EF) in the units of conductance quantum e2/h for MBT2SL and MBT2SL/hBN. EF = 0 corresponds to the center of the band gap. d The edge electronic band structures for MBT2SL (left) and MBT2SL/hBN (right). The regions with a continuous spectrum correspond to the 2D bulk states projected onto the 1D Brillouin zone. The edge crystal structure is shown in Supplementary Fig. 7. The data in (b–d) were calculated for the FM interlayer alignment in MBT2SL (see text).
