Fig. 2: Results for the HfS₂-HfTe₂ TC.

a shows the contact resistance as a function of the bias for several doping concentrations for L_C = 4.5 nm, the inset showing the results for the highest doping on a linear scale. b shows the influence of L_C on R_C for N_SD = 3×10¹³cm⁻². c shows the IV curve for a DG-MOSFET with L_C = 4.5 nm, L_ext = 4.9 nm and N_SD = 1.8×10¹³cm⁻² as well as the IV for a reference case with ohmic contacts and a reference case using a highly doped HfS₂ layer for the metal TC (N_SD = 4.2×10¹³cm⁻² in the top layer. We observed a saturation of the contact resistance when N_SD was increased above 3×10¹³cm⁻² for either the top or bottom layer). d, e show, respectively, the current and I_ON, at a fixed I_OFF and V_D of 0.01 μA/μm and 0.6 V, respectively, for several values of N_SD and L_C to demonstrate the influence of doping concentration and contact overlap length. The current is normalized by the gate perimeter, i.e., the current is divided by the gate width times the number of gates, as typically reported in the literature. f, g show, respectively, the DOS and current spectrum within the device. The full red line denotes the bottom of the conduction band in the semiconductor and the dashed lines denote the Fermi level in the metal.