Fig. 7: Results of dynamic doping simulations with two doping gates. | npj 2D Materials and Applications

Fig. 7: Results of dynamic doping simulations with two doping gates.

From: Fundamentals of low-resistive 2D-semiconductor metal contacts: an ab-initio NEGF study

Fig. 7: Results of dynamic doping simulations with two doping gates.

a Geometry of a single SC with 2 doping gates. b Geometry of the E2D2-FET. c Contact resistance and carrier concentrations of the device in a as a function of the gate potential for several values of the bias, ΔL = 0 nm and NSD = 6×1011 cm−2. d IV curves of the device in b for ΔL = 0 nm and NSD = 6×1011 cm−2 as well as the corresponding DG-MOSFET and D2-FET for comparison.

Back to article page