Table 1 TIM model parameters.

From: Two-dimensional tellurium-based diodes for RF applications

W x L

(μm2)

324

ge,1

454,55,56

Cox

(μF  cm−2)

0.5230

ge,2

054,55,56

Cdip

(μF  cm−2)

4.2215

gh,1

254,55,56

ϕTi

(eV)

4.6615

gh,2

254,55,56

ϕPd

(eV)

5.6715

\({m}_{e,1}^{* }/{m}_{0}\)

0.08557,58,59

χTe

(eV)

4.560

\({m}_{e,2}^{* }/{m}_{0}\)

054,55,56

Eg,Te

(eV)

0.3517,54,55,56,59

\({m}_{h,1}^{* }/{m}_{0}\)

0.559,61,62

\({\chi }_{Ti{O}_{2}}\)

(eV)

4

\({m}_{h,2}^{* }/{m}_{0}\)

0.117,59

Qres

(C  cm−2)

0

ΔEe,1→2 (eV)

054,55,56

T

(K)

295

ΔEh,1→2 (eV)

0.1555,56