Fig. 1: Overview of the method.
From: Van der Waals enabled formation and integration of ultrathin high-κ dielectrics on 2D semiconductors
Firstly, a layered material is exfoliated onto PDMS (a), alumina is then ALD-grown onto it using O3 as a precursor (b, c), a secondary piece of PDMS is used to exfoliate the as-grown alumina layer (d), and finally the alumina layer is placed onto a target substrate (e, f). AFM characterization of Al2O3 basal plane (RMS = 0.25 nm) (g) and graphite template (RMS = 0.24 nm) (h). Scalebars correspond to 50 nm. Characterization of the alumina layer by optical microscope (i) (scale bar corresponds to 50 μm), AFM (scale bar corresponds to 100 nm) (j) and and XPS analysis of O 1s (k) and Al 2p (l). The O 1s signal can be deconvoluted into two peaks corresponding to Al-O and Al-OH bonds.
