Table 1 Performance comparison with conventional double-peak NDT/NDR devices

From: Charge transfer mechanism for realization of double negative differential transconductance

Materials

Number of NDT peak

Mechanism

PVCR

Difference in Vpeak (Δ V)

VDD (V)

Logic state width (Δ Vin)

Ref.

MoS2/p-doped WSe2

2

NDT

103

24

2

20

This work

WSe2/Gr/WS2

2

NDT

100

0.6

2.1

1

5

MoS2/MoTe2/WSe2

2

NDT

102~103

10

2

4

45

WSe2/InSe

2

NDT

~103

10

1

5

56

Pentacene/HfS2

2

NDR

1.64

1.2

–

–

15

Gated-BP/ReS2

2

NDR

2.5

0.7

–

–

17

BP/ReS2, HfS2

2

NDR

1.5

0.4

–

–

18

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