Fig. 1: Layout and performance of our GFETs with CaF2. | npj 2D Materials and Applications

Fig. 1: Layout and performance of our GFETs with CaF2.

From: Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators

Fig. 1

a Schematic structure of our back-gated GFETs with 2 nm CaF2 insulators. Optical images of GFETs with L × W of 160 μm × 100 μm (b), 80 μm × 50 μm (c) and smaller dimensions from 40 μm × 20 μm to 9 μm × 3 μm (d). e The gate leakage current through our thin CaF2 layers is small compared to the drain current through the GFET channel with a density far below 1 A cm−2 at VG = 1 V. f Typical ID-VG characteristics of our GFETs measured at different drain voltages. g The ID-VD characteristics measured for the same GFET at different gate voltages exhibit ambipolar kinks. All provided results have been obtained for Batch#1 GFETs.

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