Fig. 3: Evaluation of graphene’s transport properties after H2 DPS cleaning and UV/O3 oxidation.
From: Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer

a Illustration 4-probe GFET. b ID-VGS characteristics of backgated GFET before- and after H2 DPS exposure, showing a shift in Vk which results from PMMA residue removal. After 7.5 min UV/O3, graphene’s conductance is significantly suppressed. c Graphene’s sheet resistance as a function of VGS before- and after H2 DPS exposure.