Fig. 4: HfO2 ALD on graphene oxide seeding layers.
From: Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer

Hf areal density measured by RBS showing a similar growth on 6 min UV/O3 functionalized graphene when benchmarked against a SiO2 i.e., well-functionalized substrate.