Fig. 5: Graphene dry UV/O3 oxidation substrate dependency.
From: Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer
Stacked Raman spectra of UV/O3 exposed graphene a on WS2 showing significant modifications after 30 min, whereas b when transferred on SiO2 only 7.5 min suffice. c Authors explain this substrate dependency on account of UV-light induced, ultrafast charge transfer between the graphene and WS2 monolayer, lowering graphene’s electron density and resulting in a slower UV/O3 oxidation rate compared to a SiO2 substrate.
