Table 2 Summary of GFET device dimensions and figures of merit

From: Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer

Device Characteristics

Figures of merit

Parameter

Numeric Value

H2 DPS

Before

After

L4P

20 µm

ION/IOFF (-19Voverdrive)

5.8

5.4

WCHANNEL

20 µm

µe (cm2 V−1s−1)

602.7

1107.1

LCHANNEL

50 µm

µh (cm2V−1s−1)

1890.0

2020.5

VDS

1.0 V

Vk (V)

18

0