Table 2 Summary of GFET device dimensions and figures of merit
From: Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer
Device Characteristics | Figures of merit | |||
|---|---|---|---|---|
Parameter | Numeric Value | H2 DPS | Before | After |
L4P | 20 µm | ION/IOFF (-19Voverdrive) | 5.8 | 5.4 |
WCHANNEL | 20 µm | µe (cm2 V−1s−1) | 602.7 | 1107.1 |
LCHANNEL | 50 µm | µh (cm2V−1s−1) | 1890.0 | 2020.5 |
VDS | 1.0 V | Vk (V) | 18 | 0 |