Fig. 4: Parasitic components and intrinsic characteristics of WS₂ DG FET considered in this study to perform circuit-level benchmarks.

a Capacitances, resistances of MOL, extension, b Intrinsic I–V graph of DG WS₂-FET with high voltage (V_ds = 0.6 V), low voltage (V_ds = 0.01 V), c Intrinsic gate capacitance graph for high voltage²².