Fig. 6: Compact modeling overview addressing parasitic components, contact resistance of DG WS2-based FET, and dynamic response characteristics of ferroelectrics. | npj 2D Materials and Applications

Fig. 6: Compact modeling overview addressing parasitic components, contact resistance of DG WS2-based FET, and dynamic response characteristics of ferroelectrics.

From: Logic-in-memory application of ferroelectric-based WS2-channel field-effect transistors for improved area and energy efficiency

Fig. 6

a WS2-FET temperature-dependent Id–Vg curve considering contact resistance, b Ferroelectrics temperature-dependent polarization-electric field hysteresis curve, c Ferroelectric model connected in series with RFE and in parallel with linear capacitor, d Temperature dependent measured Id–Vg curve of WS2-FeFET. Note that the Memory Window of 1.4 V is obtained through Program (PG) and Erase (ER) states at 300 K, including contact resistance characteristics. This has a great advantage in terms of Memory operation.

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