Fig. 3: Transport measurement set-up and low-temperature resistance at zero field.
From: Multiphase superconductivity at the interface between ultrathin FeTe islands and Bi2Te3
a Left: Schematic view of the 4-point (U+/U−, I+/I−) transport measurement geometry on Si-capped FeCh/Bi2Ch3 heterostructures. Magnetic fields B⊥ (green arrow) are oriented perpendicular to the film. Right: Typical size distribution of 60°-rotated FeSe domains D1, D2, and D3 on Bi2Se3 (reproduced from ref.18, CC license 4.0 https://creativecommons.org/licenses/by/4.0/). b Zero-field temperature dependence of the electrical resistance of Si-capped FeTe/Bi2Te3 samples with 1 ML of FeTe (black triangles – left scale) and 2 ML of FeTe (green circles – right scale). Inset: Low-temperature region in detail with multiple resistance drops. The red dashed line marks a transition at about 6 K in both samples.c Temperature dependence of the electrical resistance of Si-capped FeSe/Bi2Se3 sample (black circles – left scale) and – for comparison – a bare Bi2Se3 sample (red circles - right scale). Inset: Low-temperature region in detail.
