Fig. 3: Validation of our proposed extraction. | npj 2D Materials and Applications

Fig. 3: Validation of our proposed extraction.

From: Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance

Fig. 3

Id vs. Vov for families of devices with Lch = 200, 400, …, 1000 nm and Schottky barrier height ϕB = a 0.15 eV, b 0.3 eV, c 0.45 eV, and d 0.6 eV. x-axes show different ranges of Vov/EOT to highlight device characteristics and extractions near Id turn-on for different ϕB. Solid gray lines mark the approximate Id turn-on for each device family. e The mobility μ extracted with our method and the linear extrapolation, Y-function, and TLM approaches for device families with ϕB = 0.15 eV, f 0.3 eV, g 0.45 eV, and h 0.6 eV plotted vs. Vov/EOT. Horizontal dashed lines mark the true μ. The x-axes are the same as in i–l. i The threshold voltage VT extracted with each method for device families with ϕB = 0.15 eV, j 0.3 eV, k 0.45 eV, and l 0.6 eV plotted vs. Vov/EOT. The horizontal dashed lines mark the true channel VT.

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