Fig. 5: Robustness to variation of our method and of the TLM approach. | npj 2D Materials and Applications

Fig. 5: Robustness to variation of our method and of the TLM approach.

From: Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance

Fig. 5

Histograms of mobility overestimations for 100 families of devices with Lch = 200, 400, …, 1000 nm. The devices are selected at random from a Gaussian distribution with mean (standard deviation) μ = 50 cm2 V−1 s−1 (10%) and mean (standard deviation) VT = 0.56 V (0.1 V). a Our method and b the TLM approach at high Vov/EOT = 0.64 V/nm. c Our method and d the TLM approach at lower Vov/EOT = 0.3 V/nm. e Our method and f the TLM approach at Vov/EOT = 0.3 V/nm with three of each Lch used in the extraction. Each figure lists the mean absolute error (MAE, ideally should be close to 0%) and confidence interval coverage probability (CICP, ideally should be close to 100%).

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