Fig. 9: Flow chart for the integrated approach that combines in-situ characterisation with simulation and modelling to investigate the resistive switching mechanism. | npj 2D Materials and Applications

Fig. 9: Flow chart for the integrated approach that combines in-situ characterisation with simulation and modelling to investigate the resistive switching mechanism.

From: Solution-processable 2D materials for monolithic 3D memory-sensing-computing platforms: opportunities and challenges

Fig. 9

Leveraging the spatiotemporal resolution of each technique, the integrated approach can be used to investigate the RS mechanism and enable optimized device design. Physics based models are implemented with inputs from atomistic simulations and in-situ characterizations. Following this, compact models are employed for circuit and system-level simulations with low computational costs.

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