Fig. 4: Relative formation energies for SW-C defects under tensile strain.
From: Carbon-contaminated topological defects in hexagonal boron nitride for quantum photonics

The SW-C defects are favorable for 4-7% strain, applied parallel to the SW bond. Here, ΔF refers to the formation energy difference between the substituted carbon cluster and corresponding SW-C configurations. A negative value denotes the favorable formation of SW-C defects.